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STI30NM60ND - N-channel Power MOSFET

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Key Features

  • Type www. DataSheet4U. com VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed.
  • The world’s best RDS(on).
  • in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high d.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type www.DataSheet4U.com VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ The world’s best RDS(on)*in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.