STI30NM60ND Key Features
- The world’s best RDS(on)-in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance a
- Switching
- Part: STI30NM60ND
- Manufacturer: STMicroelectronics (official site)
- Size: 773.00 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STI30NM60N | N-channel MOSFET |
| STI30NM50N | Power MOSFET |
| STI30N65M5 | N-CHANNEL POWER MOSFET |
| STI300N4F6 | N-channel Power MOSFET |
| STI32N65M5 | N-channel MOSFET |
STI30NM60ND Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly remended for bridge topologies, in particular ZVS phase-shift converters. 15 This is preliminary...