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STL65DN3LLH5 Datasheet

Dual N-channel Power MOSFET

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STL65DN3LLH5
Dual N-channel 30 V, 0.0059 Ω, 19 A
PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
Features
Type
STL65DN3LLH5
VDSS
30 V
RDS(on)
max
<0.0065 Ω
ID
19 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™ (5x6)
Double island
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STL65DN3LLH5
65DN3LLH5
Package
PowerFLAT™(5x6)
Double island
Packaging
Tape and reel
December 2010
Doc ID 18323 Rev 1
1/12
www.st.com
12


STMicroelectronics Electronic Components Datasheet

STL65DN3LLH5 Datasheet

Dual N-channel Power MOSFET

No Preview Available !

Contents
Contents
STL65DN3LLH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 18323 Rev 1


Part Number STL65DN3LLH5
Description Dual N-channel Power MOSFET
Maker STMicroelectronics
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