Type STL6NM60N VDSS @ TJMAX 650 V RDS(on) Max < 0.92 Ω ID 5.75 A(1) 1. The value is rated according Rthj-case
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Figure 1. Internal schematic diagram Description This series of devices implements the second generation of MDmesh™ Tec.

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is t.

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