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STL6NM60N - N-channel Power MOSFET

General Description

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STL6NM60N VDSS @ TJMAX 650 V RDS(on) Max < 0.92 Ω ID 5.75 A(1) 1. The value is rated according Rthj-case.
  • 100% avalanche tested www. DataSheet4U. com.
  • Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5).

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STL6NM60N N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5) ultra low gate charge MDmesh™ II Power MOSFET Features Type STL6NM60N VDSS @ TJMAX 650 V RDS(on) Max < 0.92 Ω ID 5.75 A(1) 1. The value is rated according Rthj-case ■ 100% avalanche tested www.DataSheet4U.com ■ ■ Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5) Application ■ Switching applications Figure 1. Internal schematic diagram Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1.