STL8P4LLF6 Datasheet | STMicroelectronics

P-channel 40 V, 0.0175 Ω typ.,8 A, STrip FET™ F6 Power MOSFET in a Power FLAT™ 3.3 x 3.3 package - production data 1 2 3 4 Power FLAT™ 3.3x3.3 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STrip FET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Order code STL8P4LLF6 Marking 8P4F6 Table 1: Device summary Package Power FLAT™ 3.3 x 3.3 Packaging Tape and reel March 2015 Doc ID025617 Rev 2 This is information on a product in full production. 1/14 .st. Contents Contents...