STL80N3LLH6 Datasheet (ST Microelectronics)

STL80N3LLH6, Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

www.DataSheet4U.com Table 1.

Device summary Marking 80N3LLH6 Package PowerFLAT™ (5x6) Packaging Tape

STL80N3LLH6 Features

* Type STL80N3LLH6 VDSS 30 V RDS(on) max 0.005 Ω ID 21 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™