STL86N3LLH6AG Datasheet (STMicroelectronics)

STL86N3LLH6AG, N-channel MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STL86N3LLH6AG Product summary Order code STL86N3LLH6AG Marking 86N3LLH6 Package Po

STL86N3LLH6AG Features

* Order code VDS RDS(on) max. ID STL86N3LLH6AG 30 V 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level