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STL8N10F7

N-CHANNEL POWER MOSFET

STL8N10F7 Features

* Order code VDS RDS(on) max. ID PTOT STL8N10F7 100 V 20 mΩ 8 A 2.9 W

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications Description This N-channel

STL8N10F7 General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL8N10F7 Marking 8N10F Table 1: Device sum.

STL8N10F7 Datasheet (518.25 KB)

Preview of STL8N10F7 PDF

Datasheet Details

Part number:

STL8N10F7

Manufacturer:

STMicroelectronics ↗

File Size:

518.25 KB

Description:

N-channel power mosfet.
STL8N10F7 N-channel 100 V, 17 mΩ typ., 8 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Figure 1: Internal .

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TAGS

STL8N10F7 N-CHANNEL POWER MOSFET STMicroelectronics

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