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STL8N10F7 N-CHANNEL POWER MOSFET

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Description

STL8N10F7 N-channel 100 V, 17 mΩ typ., 8 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Figure 1: Internal .
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code VDS RDS(on) max. ID PTOT STL8N10F7 100 V 20 mΩ 8 A 2.9 W
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

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