STL8N6LF6AG Datasheet (STMicroelectronics)

STL8N6LF6AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STL8N6LF6AG Table 1: Device summary Marking Package 8N6LF6 PowerFLAT™ 5x6 Packing Tape and re

STL8N6LF6AG Features

* Order code VDS RDS(on) max. ID PTOT STL8N6LF6AG 60 V 27 mΩ 32 A 55 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Wettable flank package Applicatio