STL8DN6LF6AG Datasheet - STMicroelectronics

STL8DN6LF6AG Automotive-grade dual N-channel MOSFET

S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL8DN6LF6AG Product summary Order code STL8DN6LF6AG Marki.

STL8DN6LF6AG Features

* Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6)

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Wet

STL8DN6LF6AG Datasheet (399.10 KB)