STPSC12065-Y diode equivalent, automotive 650v 12a silicon carbide power schottky diode.
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forwar.
* High forward surge capability
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* VRRM guaranteed fr.
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, n.
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