STPSC12065 diode equivalent, 650v power schottky silicon carbide diode.
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability
* .
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* D²PAK HV creepage distance (anode to .
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, n.
Image gallery
Download