STPSC12C065-Y Key Features
- No or negligible reverse recovery
- Dedicated to PFC
- Part: STPSC12C065-Y
- Manufacturer: STMicroelectronics (official site)
- Size: 160.96 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STPSC12065 | 650V power Schottky silicon carbide diode |
| STPSC12065-Y | Automotive 650V 12A silicon carbide power Schottky diode |
| STPSC12H065 | 650V power Schottky silicon carbide diode |
| STPSC12H065C | power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
STPSC12C065-Y Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.