STPSC20H065C-Y Key Features
- No or negligible reverse recovery
- Dedicated to PFC
- Part: STPSC20H065C-Y
- Manufacturer: STMicroelectronics (official site)
- Size: 150.98 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STPSC20H065C | power Schottky silicon carbide diode |
| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
| STPSC20H12 | power Schottky silicon carbide diode |
| STPSC20H12-Y | silicon carbide power Schottky diode |
| STPSC20H12CWY | power Schottky silicon carbide diode |
STPSC20H065C-Y Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.