Datasheet Summary
Automotive 1200 V, 2 A power Schottky silicon carbide diode
Product label
Product status link STPSC2H12-Y
Product summary
IF(AV)
2A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
Features
- AEC-Q101 qualified
- PPAP capable
- No or negligible reverse recovery
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- Creepage distance of 3 mm as per IEC 60664-1
- ECOPACK2 pliant ponent
Applications
- Bootstrap function of SiC MOS-FETS
- Snubber diode
- Switching diode
Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the...