STPSC2H12-Y diode equivalent, 2a power schottky silicon carbide diode.
* AEC-Q101 qualified
* PPAP capable
* No or negligible reverse recovery
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* Cre.
* Bootstrap function of SiC MOS-FETS
* Snubber diode
* Switching diode
Description
The SiC diode is an ultra.
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