STRHMF16N20 Datasheet | STMicroelectronics

Features VDS 200 V ID 16 A RDS(on) typ. 70 mΩ Qg 52 n C - ESCC qualified as per detail specification 5205/034 - 100 krad total ionizing dose guaranteed - Wide RBSOA under heavy-ions radiation exposure - Low RDS(on) - Low total gate charge - Fast switching Description The STRHMF16N20 is a N-channel Power MOSFET able to operate in extreme environment conditions and severe radiation exposure. It provides superior high reliability performance and high immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification 5205/034 and available in SMD.5 hermetic package, it is specifically remended for space and harsh environment applications and suitable for power conversion, motor control and power switch circuits. Device summary Part number STRHMF16N20S1 STRHMF16N20SG STRHMF16N20ST Product summary Quality level Package Engineering model Flight model SMD.5 Flight model Note: See Table 8 for ordering information. Lead finish Gold Solder dip Radiation level - 100 krad 100 krad DS13665 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Tamb = 25 °C unless otherwise specified Table 1. Absolute maximum...