STS10P3LLH6 Datasheet, STMicroelectronics

Order code VDS STS10P3LLH6 -30 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 techno.

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS10P3LLH6 Product summary Order code .