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STS10P4LLF6 Datasheet

P-CHANNEL POWER MOSFET

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STS10P4LLF6
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET™ F6
Power MOSFET in SO-8 package
Datasheet - production data
Figure 1: Internal schematic diagram
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STS10P4LLF6 10K4L
SO-8
Tape and
reel
For the P-channel MOSFET actual polarity
of voltages and current have to be reversed
Features
Order code
STS10P4LLF6
VDS
40 V
RDS(on) max.
0.015
ID
10 A
December 2014
DocID025774 Rev 3
This is information on a product in full production.
1/14
www.st.com


STMicroelectronics Electronic Components Datasheet

STS10P4LLF6 Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

Contents
Contents
STS10P4LLF6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
3 Electrical characteristics (curves).................................................. 6
4 Test circuits ..................................................................................... 8
5 Package mechanical data ............................................................... 9
5.1 SO-8 package mechanical data ........................................................ 9
6 Packaging mechanical data.......................................................... 12
7 Revision history ............................................................................ 13
2/14 DocID025774 Rev 3


Part Number STS10P4LLF6
Description P-CHANNEL POWER MOSFET
Maker STMicroelectronics
Total Page 14 Pages
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