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STS10P4LLF6 Datasheet P-Channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STS10P4LLF6 Datasheet P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3).

General Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STS10P4LLF6 Product summary Order code STS10P4LLF6 Marking 10P4L Package SO-8 Packing Tape and reel DS10121 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS STS10P4LLF6 -40 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 15 mΩ ID -10 A.