STU10N60M2 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STU10N60M2 Features

* Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Appli

STU10N60M2 General Description

AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They .

STU10N60M2 Datasheet (935.46 KB)

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STU10N60M2

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STMicroelectronics ↗

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935.46 KB

Description:

N-channel power mosfet.
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IP.

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STU10N60M2 Features

STU10N60M2 General Description

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