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STU11NB60 - N-channel Power MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STU11NB60
Manufacturer STMicroelectronics
File Size 69.25 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU11NB60 Datasheet
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Full PDF Text Transcription

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® STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU11NB60 www.DataSheet4U.com s s s s s s V DSS 600 V R DS(on) < 0.6 Ω ID 11 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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