STU6N65M2 mosfet equivalent, n-channel power mosfet.
Order codes STF6N65M2 STP6N65M2 STU6N65M2
VDS RDS(on) max
ID
650 V
1.35 Ω
4A
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technolog.
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for .
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