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N-CHANNEL 150V - 0.042Ω - 40A TO-247 MESH OVERLAY™ MOSFET
PRELIMINARY DATA TYPE STW40NS15
s s s s
STW40NS15
VDSS 150 V
RDS(on) <0.052Ω
ID 40A
TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
DESCRIPTION This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.