SPP2337 mosfet equivalent, p-channel enhancement mode mosfet.
* -100V/-1.5A,RDS(ON)= 300mΩ@VGS=-10V
* -100V/-1.2A,RDS(ON)= 360mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP2337 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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