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K4N51163QC-ZC

Manufacturer: Samsung Semiconductor
K4N51163QC-ZC datasheet preview

Datasheet Details

Part number K4N51163QC-ZC
Datasheet K4N51163QC-ZC-Samsung.pdf
File Size 1.44 MB
Manufacturer Samsung Semiconductor
Description 512Mbit gDDR2 SDRAM
K4N51163QC-ZC page 2 K4N51163QC-ZC page 3

K4N51163QC-ZC Overview

F.

K4N51163QC-ZC Key Features

  • 1.8V + 0.1V power supply for device operation
  • 1.8V + 0.1V power supply for I/O interface
  • 4 Banks operation
  • Posted CAS
  • Programmable CAS Letency : 3,4,5
  • Programmable Additive Latency : 0, 1, 2, 3 and 4
  • Write Latency (WL) = Read Latency (RL) -1
  • Burst Legth : 4 and 8 (Interleave/nibble sequential)
  • Programmable Sequential/ Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

K4N51163QC-ZC Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

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