K4S643232H-TC-L70 Datasheet 64Mb H-die (x32) SDRAM

Manufacturer: Samsung Semiconductor

K4S643232H-TC-L70 64mb h-die (x32) sdram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K4S643232H-TC-L70
Manufacturer	Samsung Semiconductor
File Size	115.47 KB
Description	64Mb H-die (x32) SDRAM
Download	K4S643232H-TC-L70 Download (PDF)

General Description

The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

I/O transactions are possible on every clock cycle.

Overview

SDRAM 64Mb H-die (x32) CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice.

- 1 - Rev.

1.3 February.

Key Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period(4K Cycle).

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