K4S643232H-TC-L70 - 64Mb H-die (x32) SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4S643232H-TC-L70
Manufacturer	Samsung
File Size	115.47 KB
Description	64Mb H-die (x32) SDRAM
Datasheet	K4S643232H-TC-L70 Datasheet
Additional preview pages of the K4S643232H-TC-L70 datasheet.

Product details

Description

The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period(4K Cycle).

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Other Datasheets by Samsung

K4S643232H-TC-L50 - 64Mb H-die (x32) SDRAM
K4S643232H-TC-L55 - 64Mb H-die (x32) SDRAM
K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM
K4S643232H-UC-L50 - 2M x 32 SDRAM
K4S643232H-UC-L55 - 2M x 32 SDRAM
K4S643232H-UC-L60 - 2M x 32 SDRAM

Published: Jul 8, 2016 |