K9F1G08U0B - Flash Memory

Samsung Electronics

Datasheet Details

Part number	K9F1G08U0B
Manufacturer	Samsung Electronics
File Size	624.88 KB
Description	Flash Memory
Datasheet	K9F1G08U0B_SamsungElectronics.pdf

Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit.

Voltage Supply - 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V.
Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Ad.

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Published: Nov 15, 2007 |