K9F1G08U0B Overview
Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms.
K9F1G08U0B Key Features
- Voltage Supply
- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V
- Organization
- Memory Cell Array : (128M + 4M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
K9F1G08U0B Applications
- Samsung Electronics reserves the right to change products or specification without notice
