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K9F1G08U0A

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

K9F1G08U0A Features

* Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V

* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program

K9F1G08U0A General Description

of Copy-back program is changed 4. Voltage range is changed -1.7V~1.95V -> 1.65V~1.95V 5. Note2 of Command Sets is added 1. CE access time : 23ns->35ns (p.11) 1. The value of tREA for 3.3V device is changed.(18ns->20ns) 2. EDO mode is added. 1. The flow chart to creat the initial invalid block table.

K9F1G08U0A Datasheet (1.05 MB)

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Datasheet Details

Part number:

K9F1G08U0A

Manufacturer:

Samsung semiconductor

File Size:

1.05 MB

Description:

128m x 8 bit / 256m x 8 bit nand flash memory.
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.

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K9F1G08U0A 128M Bit 256M Bit NAND Flash Memory Samsung semiconductor

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