* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

ORDERING INFORMATION Part No. K4M561633G-R(B)N/G/L/F75 K4M561633G-R(B)N/G/L/F1H K4M561633G-R(B)N/G/L/F1L Max Freq. 133.

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

K4M56163LG

K4M56163PE-F1L

K4M56163PE-F90

K4M56163PE-R

K4M56163PE-RG

K4M56163PG

K4M563233D

K4M563233E

K4M563233G

K4M56323LE

K4M56323PG-C

K4M56323PG-F

K4M56323PG-FE