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K4M561633G Datasheet 4m X 16bit X 4 Banks Mobile Sdram

Manufacturer: Samsung Semiconductor

Overview: K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in.

General Description

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www. DataSheet4U. com.
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Functi.

More Datasheets from Samsung Semiconductor

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K4M563233G 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323PG-C 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-F 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-FE 2M x 32Bit x 4 Banks Mobile SDRAM
K4M56323PG-G 2M x 32Bit x 4 Banks Mobile SDRAM
K4M511633C 8M x 16Bit x 4 Banks Mobile SDRAM

K4M561633G Distributor