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K4S56163PF-RG Datasheet, Samsung semiconductor

K4S56163PF-RG Datasheet, Samsung semiconductor

K4S56163PF-RG

datasheet Download (Size : 114.91KB)

K4S56163PF-RG Datasheet

K4S56163PF-RG 54fbga equivalent, 4m x 16bit x 4 banks mobile sdram in 54fbga.

K4S56163PF-RG

datasheet Download (Size : 114.91KB)

K4S56163PF-RG Datasheet

Features and benefits


* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

Application

ORDERING INFORMATION Part No. K4S56163PF-R(B)G/F75 K4S56163PF-R(B)G/F90 K4S56163PF-R(B)G/F1L Max Freq. 133MHz(CL3), 83.

Description

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

Image gallery

K4S56163PF-RG Page 1 K4S56163PF-RG Page 2 K4S56163PF-RG Page 3

TAGS

K4S56163PF-RG
16Bit
Banks
Mobile
SDRAM
54FBGA
Samsung semiconductor

Manufacturer


Samsung semiconductor

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