* Fast Access Time 10, 12, 15ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.)
* Single 5.0V±10% Power Supply
* TTL Compatib
K6E0808C1E-I10 Datasheet (181.62 KB)
K6E0808C1E-I10
Samsung semiconductor
181.62 KB
32k x 8 bit high-speed cmos static ram.
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperatur.
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