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K6F4008U2G - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Datasheet Summary

Description

The K6F4008U2G families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

  • Process Technology: Full CMOS.
  • Organization: 512K x8 bit.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48(36)-TBGA-6.00x7.00.

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Datasheet Details

Part number K6F4008U2G
Manufacturer Samsung semiconductor
File Size 152.73 KB
Description 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F4008U2G Datasheet
Additional preview pages of the K6F4008U2G datasheet.

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Full PDF Text Transcription

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K6F4008U2G Family Preliminary CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date June 11, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 June 2003 K6F4008U2G Family Preliminary CMOS SRAM 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 512K x8 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.
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