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K6F4016U4G-F

Manufacturer: Samsung Semiconductor

K6F4016U4G-F datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K6F4016U4G-F datasheet preview

K6F4016U4G-F Datasheet Details

Part number K6F4016U4G-F
Datasheet K6F4016U4G-F K6F4016U4G Datasheet (PDF)
File Size 155.08 KB
Manufacturer Samsung Semiconductor
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G-F page 2 K6F4016U4G-F page 3

K6F4016U4G-F Overview

The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS.

K6F4016U4G-F Key Features

  • Process Technology: Full CMOS
  • Organization: 256K x16 bit
  • Power Supply Voltage: 2.7~3.3V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three State Outputs
  • Package Type: 48-TBGA-6.00x7.00
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K6F4016U4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U6G 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U6G-F 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008R2C 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1008V2C 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM

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