Download the K7J643682M datasheet PDF.
This datasheet also includes the K7J641882M variant, as both parts are published together in a single manufacturer document.
Note: The manufacturer provides a single datasheet file (K7J641882M_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
K7J643682M K7J641882M www.DataSheet4U.com 2Mx36 & 4Mx18 DDR II SIO b2 SRAM 72Mb M-die DDRII SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
Key Features
1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.
Separate independent read and write data ports.
HSTL I/O.
Synchronous pipeline read with self timed late write.
Registered address, control and data input/output.
K7J643682M Datasheet
