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KM416S8030B Datasheet, Samsung semiconductor

KM416S8030B Datasheet, Samsung semiconductor

KM416S8030B

datasheet Download (Size : 133.48KB)

KM416S8030B Datasheet

KM416S8030B lvttl equivalent, 128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

KM416S8030B

datasheet Download (Size : 133.48KB)

KM416S8030B Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

ORDERING INFORMATION Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package.

Description

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system.

Image gallery

KM416S8030B Page 1 KM416S8030B Page 2 KM416S8030B Page 3

TAGS

KM416S8030B
128Mbit
SDRAM
16Bit
Banks
Synchronous
DRAM
LVTTL
Samsung semiconductor

Manufacturer


Samsung semiconductor

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