Datasheet Details
| Part number | SW065R68E7T |
|---|---|
| Manufacturer | Samwin |
| File Size | 683.48 KB |
| Description | N-channel MOSFET |
| Datasheet | SW065R68E7T-Samwin.pdf |
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Overview: SW065R68E7T N-channel Enhanced mode TO-252 MOSFET.
| Part number | SW065R68E7T |
|---|---|
| Manufacturer | Samwin |
| File Size | 683.48 KB |
| Description | N-channel MOSFET |
| Datasheet | SW065R68E7T-Samwin.pdf |
|
|
|
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes Item Sales Type Marking 1 SW D 065R68E7T SW065R68E7T Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy Peak diode recovery dv/dt (note 1) (note 2) (note 1) (note 3) Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature *.
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