* High ruggedness
* RDS(ON) (Max 0.023 Ω)@VGS=10V
* Gate Charge (Typ 100nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-220 BVDSS : 100V .

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially des.

SW30CPF06

SW30N06

SW313

SW3205

SW3205B

SW3317E-G

SW3318-G

SW3318E-G

SW3372E-H

SW3518S

SW3522

SW3526

SW3556