Datasheet Details
| Part number | SW47N65K |
|---|---|
| Manufacturer | Samwin |
| File Size | 733.45 KB |
| Description | N-channel MOSFET |
| Datasheet | SW47N65K-Samwin.pdf |
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|
Overview: SW47N65K N-channel Enhanced mode TO-247 MOSFET.
| Part number | SW47N65K |
|---|---|
| Manufacturer | Samwin |
| File Size | 733.45 KB |
| Description | N-channel MOSFET |
| Datasheet | SW47N65K-Samwin.pdf |
|
|
|
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 650V ID : 47A RDS(ON) :60mΩ 2 1 3 Order Codes Item Sales Type 1 SW T 47N65 K Marking SW47N65K Package TO-247 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt dv/dt PD TSTG, TJ TL Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) MOSFET dv/dt ruggedness (@VDS=0~400V) Peak diode recovery dv/dt Total power dissipation (@TC=25oC) Derating factor above 25oC (note 3) Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
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