silicon npn transistor.
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity.
Package Dimensions
unit:mm
2003B
[2SC4002]
5.0
4.0
4.0
5.0
0.45 0.5
.
Features
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity.
Package Dimensio.
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