* On-chip Zener diode of 60±10V between collector and base.
* Uniformity in collector-to-base voltage.
* High DC current gain : hFE=1000 min (VCE=5V, IC=500mA).
* Wide ASO.
* High inductive load handling capability : Es/b=15mJ (min). 6.0 3.0 14.0 8.5 [2SC4169] 6.0 5.0 4.7 0.5 0
2SC4169
Sanyo Semicon Device
34.53 KB
Npn epitaxial planar silicon transistor.
Ordering number:ENN2476A NPN Epitaxial Planar Silicon Transistor 2SC4169 Driver Applications Applications Suitable for use in switching of L l.
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