900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Sanyo Electric Components Datasheet

2SD1047P Datasheet

General-Purpose Amplifier Transistors

No Preview Available !

Ordering number : ENN6572
2SB817P / 2S2DS1B081477PP: PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
www.DataSheet4U.coWm ide ASO because of built-in ballast resistance.
Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit : mm
2022A
[2SB817P / 2SD1047P]
15.6 3.2
14.0
4.8
2.0
Specifications
( ) : 2SB817P
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
1.6
2.0
1.0
12
0.6
3
5.45 5.45
Conditions
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)80V, IE=0
VEB=(--)4V, IC=0
min
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
()160
()140
()6
()12
()15
120
150
40 to +150
Unit
V
V
V
A
A
W
°C
°C
Ratings
typ
max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-3036 No.6572-1/4


Sanyo Electric Components Datasheet

2SD1047P Datasheet

General-Purpose Amplifier Transistors

No Preview Available !

2SB817P / 2SD1047P
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
www.DataSheet4FUa.lcl oTmime
Storage Time
Symbol
Conditions
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tf
tstg
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)6A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)1A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0
IC=(--)5mA, RBE=
IC=(--)50mA, RBE=
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
* : The 2SB817P / 2SD1047P are classified by 1A hFE as follows
Rank
D
E
hFE
60 to 120
100 to 200
Swicthing Time Test Circuit
IB1
PW=20µs
IB2 1
INPUT
200VR
51
1µF 1µF
OUTPUT
20
VCC=20V
VBE= --2V 10IB1= --10IB2=IC=1A
For PNP, the polarity is reversed.
IC -- VCE
--10
2SB817P
--9
--8
--20--01m6A0mA
--7 --120mA
--6
--80mA
--5
--4
--40mA
--3
--20mA
--2
--1
0 IB=0
0 --5 --10 --15 --20 --25 --30 --35 --40
Collector-to-Emitter Voltage, VCE -- V IT02167
IC -- VBE
--7
2SB817P
--6 VCE= --5V
10
9
8
7
6
5
4
3
2
1
0
0
7
6
min
60*
20
Ratings
typ
15
(300)210
(1.1)0.6
(--)160
(--)140
(--)140
(--)6
(0.25)0.26
(0.53)0.68
(1.61)6.88
max
200*
1.5
2.5
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
IC -- VCE
200mA
160mA
120mA
80mA
2SD1047P
40mA
20mA
IB=0
5 10 15 20 25 30 35 40
Collector-to-Emitter Voltage, VCE -- V IT02168
IC -- VBE
2SD1047P
VCE=5V
--5 5
--4 4
--3 3
--2 2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter Voltage, VBE -- V IT02169
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE -- V IT02170
No.6572-2/4


Part Number 2SD1047P
Description General-Purpose Amplifier Transistors
Maker Sanyo Semiconductor
PDF Download

2SD1047P Datasheet PDF






Similar Datasheet

1 2SD1047 NPN Transistor
INCHANGE
2 2SD1047 NPN Triple Diffused Planar Silicon Transistors
Sanyo Semicon Device
3 2SD1047 NPN Transistor
STMicroelectronics
4 2SD1047C NPN Triple Diffused Planar Silicon Transistor
Sanyo
5 2SD1047E NPN Transistor
INCHANGE
6 2SD1047P General-Purpose Amplifier Transistors
Sanyo Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy