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2SD1048 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Ultrasmall package allows miniaturization in end products.
  • Large current capacity (IC=0.7A) and low-saturation voltage. Package Dimensions unit : mm 2018B [2SB815 / 2SD1048] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications ( ) : 2SB815 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage. Package Dimensions unit : mm 2018B [2SB815 / 2SD1048] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications ( ) : 2SB815 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.