2N3196 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; VCE=-4V 30 15 MIN -60 TYP. 2N3196 SYMBOL VCEO(SUS) VCE(sat) VBE(on)...