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SavantIC

2N6492 Datasheet Preview

2N6492 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6492
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
55
45
5
15
100
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.75
UNIT
/W




SavantIC

2N6492 Datasheet Preview

2N6492 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tm=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=100mA
VBE Base-emitter on voltage
ICEO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
IC=3A ; VCE=4V
VCE=40V; IB=0
VCE=55V; VBE(off)=-1.5V
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=4V
hFE-2
DC current gain
IC=15A ; VCE=4V
Product Specification
2N6492
MIN TYP. MAX UNIT
45 V
3.0 V
4.0 V
2.8 V
1.0 mA
0.5 mA
3.0 mA
500
100
2


Part Number 2N6492
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6492 Datasheet PDF






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