2N6492
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- High DC current gain
- DARLINGTON APPLICATIONS
- General-purpose power amplifier and low frequency swithing applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 55 45 5 15 100 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
VCEO(SUS) VCEsat VBEsat VBE ICEO ICEX IEBO h FE-1 h FE-2
Collector-emitter sustaining...
