2N7000 Key Features
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
2N7000 is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Manufacturer | Part Number | Description |
|---|---|---|
Microchip Technology |
2N7000 | N-Channel DMOS FET |
Motorola Semiconductor |
2N7000 | TMOS FET Transistor |
NXP Semiconductors |
2N7000 | N-channel MOSFET |
NTE Electronics |
2N7000 | N-Channel MOSFET |
Inchange Semiconductor |
2N7000 | N-Channel MOSFET |
Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free.