2N7000 - N-Channel Enhancement Mode Power MosFET

SeCoS Halbleitertechnologie GmbH

Key Features

High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.

2N7000 n-channel enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	2N7000
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	145.45 KB
Description	N-Channel Enhancement Mode Power MosFET
Datasheet	2N7000 Datasheet

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number	Description
2N7002K	N-channel MOSFET
2N7002KDW	Dual N-Channel MOSFET
2N7002KG	N-Ch Small Signal MOSFET
2N7002KW	N-channel MOSFET
2N7002T	Small Signal MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability APPLICATIONS  Load switch for portable devices  DC/DC converter MARKING 2N 7000 021  D  G ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current ID Power Dissipation PD Thermal Resistance from Junction to Ambient RθJA Operating Junction and Storage Temperature Range TJ, TSTG  S TO-92  Source  Gate  Drain REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 14.