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2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel Enhancement Mode Power MosFET

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Elektronische Bauelemente
2N7000
0.2A , 60V , RDS(ON) 5
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
APPLICATIONS
Load switch for portable devices
DC/DC converter
MARKING
2N
7000
021
D

G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current
ID
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Operating Junction and Storage Temperature Range
TJ, TSTG

S
TO-92
Source
Gate
Drain
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70 14.5
3.30 3.81
0.36 0.56
REF.
F
G
H
J
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
Rating
60
0.2
0.625
200
150, -55~150
Unit
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Drain-Source Breakdown Voltage
V(BR)DSS
60
-
- V VGS=0, ID=10μA
Gate Threshold Voltage 1
VGS(th) 0.8 -
3 V VDS=VGS, ID=1mA
Gate-Source Leakage Current
IGSS - - ±10 nA VDS=0, VGS= ±15V
Drain-Source Leakage Current
IDSS - - 1 μA VDS=60V, VGS=0
On-State Drain Current
ID(ON)
75 -
- mA VDS=10V, VGS=4.5V
Static Drain-Source On-Resistance 1
RDS(ON)
-
-
-
-
6 VGS=4.5V, ID=75mA
5 VGS=10V, ID=500mA
Forward Transconductance 1
gfs
100 -
- mS VDS=10V, ID=200mA
Drain-Source On-Voltage 1
Input Capacitance 2
Output Capacitance 2
Reverse Transfer Capacitance 2
VDS(ON)
Ciss
Coss
Crss
-
-
0.45
V VGS=4.5V, ID=75mA
- - 2.5
VGS=10V, ID=500mA
- 60 -
VGS=0
- 25 - pF VDS=25V
-5-
f=1MHz
Turn-on Delay Time 2
Td(on)
Turn-off Delay Time 2
Td(off)
Notes:
1. Pulse Test.
2. These parameters have no way to be verified.
-
-
10
10
-
-
nS
VDD=15V, VGEN=10V
RL=30, RG=25, ID=500mA
http://www.SeCoSGmbH.com/
10-Nov-2015 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel Enhancement Mode Power MosFET

No Preview Available !

Elektronische Bauelemente
CHARACTERISTIC CURVES
2N7000
0.2A , 60V , RDS(ON) 5
N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
10-Nov-2015 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number 2N7000
Description N-Channel Enhancement Mode Power MosFET
Maker SeCoS
Total Page 2 Pages
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