* Super high dense cell design for extremely low RDS(ON)
* Reliable and rugged Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C
SMG2301
SeCoS
350.20 KB
P-channel mosfet.
SMG2301 Elektronische Bauelemente -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifi.
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