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SSQF07N65J - N-Ch Enhancement Mode Power MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

Features

  • High Current Rating.
  • Low RDS(ON).
  • Low Capacitance.
  • Low Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy Specified.
  • Fast Switching Capability.

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Datasheet Details

Part number SSQF07N65J
Manufacturer SeCoS
File Size 203.10 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSQF07N65J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSQF07N65J 7.4A, 650V, RDS(ON) 1.3Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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