* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL65B
Seme LAB
19.98 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL65B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (.
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