Full PDF Text Transcription for HCD6N70S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HCD6N70S. For precise diagrams, and layout, please refer to the original PDF.
HCD6N70S_HCU6N70S June 2015 HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gat...
View more extracted text
inative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A D-PAK I-PAK 2 1 3 HCD6N70S 1 2 3 HCU6N70S 1.Gate 2. Drain 3.
HCD6N70S Datasheet
