Full PDF Text Transcription for HCP65R360S (Reference)
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HCP65R360S. For precise diagrams, and layout, please refer to the original PDF.
HCP65R360S HCP65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very ...
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ior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3.
HCP65R360S Datasheet
