HCS80R250T Description
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 18 0.25 58 Unit V A ȍ.
HCS80R250T is 800V N-Channel Super Junction MOSFET manufactured by SemiHow.
| Part Number | Description |
|---|---|
| HCS80R650E | 800V N-Channel Super Junction MOSFET |
| HCS80R670S | 800V N-Channel Super Junction MOSFET |
| HCS80R850S | 800V N-Channel Super Junction MOSFET |
| HCS12NK65V | N-Channel MOSFET |
| HCS20NT60V | N-Channel MOSFET |
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 18 0.25 58 Unit V A ȍ.